溅射沉积SiO2和SiNx钝化AlGaN/GaN HEMTs的电流崩塌研究

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867061

T. Kakegami, S. Ohi, K. P. Sengendo, H. Tokuda, M. Kuzuhara

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引用次数: 1

摘要

本文对溅射沉积SiO2和SiNx介质钝化AlGaN/GaN高电子迁移率晶体管(hemt)的电流崩溃进行了比较研究。采用脉冲I-V测量来表征器件的开关响应。结果表明，sinx钝化器件的电流崩溃程度优于sio2钝化器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx

This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNx dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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