低损耗有机材料RT/duroid 6002介电性能在30 ~ 70 GHz范围内的热稳定性

C. D. Morcillo, S. Bhattacharya, A. Horn, J. Papapolymerou
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引用次数: 6

摘要

本文首次利用微带环形谐振器方法,研究了RT/duroid®6002在20°C至200°C的温度范围内,在30 GHz至70 GHz范围内,在两种不同的微带阻抗下,介电性能的热稳定性,即相对介电常数和损耗正切。在每个温度点进行高频分辨率、多线TRL校准,以提高测量精度。测量结果表明,在整个带宽范围内,相对介电常数的归一化温度系数为- 17.6 ppm/°C,非常稳定。同样,归一化损耗正切温度系数约为0.00118°C−1,在整个测量带宽内变化很小。
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Thermal stability of the dielectric properties of the low-loss, organic material RT/duroid 6002 from 30 GHz to 70 GHz
For the first time, the thermal stability of the dielectric properties, i.e. the relative permittivity and the loss tangent, are presented for RT/duroid® 6002 from 30 GHz to 70 GHz over the temperature range between 20 °C and 200 °C, using the microstrip ring resonator method at two different microstrip impedances. High-frequency-resolution, Multiline TRL calibrations were performed at each temperature point to increase the accuracy of the measurements. Measurements show a remarkably-stable normalized temperature coefficient of the relative permittivity of −17.6 ppm/°C across the entire bandwidth. Likewise, the normalized loss tangent temperature coefficient had a value of about 0.00118 °C−1, with little variations throughout the measurement bandwidth.
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