{"title":"利用光- cvd生长氮化磷薄膜的新型InP肖特基二极管","authors":"Y. Jeong, G.T. Kim, S.T. Kim","doi":"10.1109/ICIPRM.1990.203045","DOIUrl":null,"url":null,"abstract":"The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film\",\"authors\":\"Y. Jeong, G.T. Kim, S.T. Kim\",\"doi\":\"10.1109/ICIPRM.1990.203045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203045\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film
The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<>
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