双极晶体管的大电流效应建模:理论综述

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551078

M. Schröter, Sophia Falk

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引用次数: 1

摘要

综述了双极晶体管大电流效应的理论。讨论了柯克效应、基极加宽、高电流密度限制、小信号存储时间计算等广泛应用的概念。指出了由于对器件物理的不正确解释而产生的误解，并在器件仿真的基础上定量地论证了这些误解对紧凑建模的影响。

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Modeling High-Current Effects in Bipolar Transistors: A Theory Review

The theory of high-current effects in bipolar transistors is reviewed. Widely used concepts such as Kirk-effect, base widening, high current density limit, and the calculation of the small-signal storage time are discussed. Misconceptions resulting from incorrect interpretations of the device physics are pointed out and their impact on compact modeling is quantitatively demonstrated based on device simulation.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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