一种采用4路t型结组合网络的18dbm 155- 180ghz SiGe功率放大器

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2019-09-01 DOI:10.1109/ESSCIRC.2019.8902847

M. Kucharski, H. Ng, D. Kissinger

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引用次数: 22

摘要

提出了一种采用t型结网络实现高效功率组合的四路功率放大器(PA)。该电路采用130 nm SiGe BiCMOS技术实现，fT/fMAX= 300/500 GHz。该放大器在170 GHz时达到30.2 dB的峰值线性增益，在155-180 GHz范围内达到27.2 dB以上。在170 GHz时，电路提供高达18 dBm的饱和输出功率(P SAT)，输出参考1dB压缩点(OP 1dB)为15.6 dBm，据作者所知，这是先前报道的140 GHz以上硅基PAs中最高的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network

This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology with fT/fMAX= 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at 15.6 dBm, which to the best author’s knowledge, are the highest among other previously reported silicon-based PAs above 140 GHz.

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ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)

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