碳纳米管场效应管高频性能的评述

D. Pulfrey
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引用次数: 9

摘要

对碳纳米管场效应晶体管(cnfet)高频性能的最新文献进行了综述。重点是功值系数fT,即共源短路电流增益。其目的是:将注意力引向最相关的测量数据;将这些数据与其他晶体管的记录值以及cnfet的预测结果进行比较;解释预测数据的巨大差异;提供高频cnfet的预后。
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Critique of high-frequency performance of carbon nanotube FETs
The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.
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1T-capacitorless bulk memory: Scalability and signal impact Anisotropy of electron mobility in arbitrarily oriented FinFETs Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond Critique of high-frequency performance of carbon nanotube FETs Analytical and compact modelling of the I-MOS (impact ionization MOS)
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