基于DDR4存储器的时间裕度分析和功率测量

A. Lingambudi, S. Vijay, W. Becker, Michael Pardeik
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引用次数: 4

摘要

内置DDR4(第四代双数据速率)SDRAM(同步动态随机存取存储器)的内存是当前用于高性能计算系统的内存组件。DDR4信号接口工作高达3200 Mbps的数据速率和1.2 V。这是一个更高的频率在更低的电压,因此更低的功率,比第三代DDR3内存条。较高的频率和较低的电压导致时间裕度减小。在DDR4中,时间裕度和功率使用的表征显着增加了重要性。在本文中,一种实验量化时序余量和功率的方法应用于边界电压和频率角,以规划、设计和构建针对功耗和时序余量进行优化的高性能计算系统。
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Timing margin analysis and Power measurement with DDR4 memory
DIMMs built with DDR4 (Double Data Rate 4th-generation) SDRAM (Synchronous Dynamic Random-Access Memory) are the current memory components used on HPC (High Performance Computing) systems. The DDR4 signal interfaces operate up to a 3200 Mbps data rate and at 1.2 V. This is a higher frequency at a lower voltage, therefore lower power, than the third generation DDR3 DIMMs. The higher frequency and lower voltage results in decreased timing margins. The characterization of the timing margins and power usage is of significantly increased importance in DDR4. In this paper, a methodology for experimentally quantifying timing margins and power is applied at bounding voltage and frequency corners to plan, design, and architect HPC systems optimized for power consumption and with timing margin.
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