通过物理严格模拟优化功率器件的自由载流子吸收测量

R. Thalhammer, F. Hille, G. Wachutka
{"title":"通过物理严格模拟优化功率器件的自由载流子吸收测量","authors":"R. Thalhammer, F. Hille, G. Wachutka","doi":"10.1109/SISPAD.2000.871255","DOIUrl":null,"url":null,"abstract":"The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for optimization of the optical set-up and the sample geometries which minimize the unavoidable experimental errors are presented.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimizing free carrier absorption measurements for power devices by physically rigorous simulation\",\"authors\":\"R. Thalhammer, F. Hille, G. Wachutka\",\"doi\":\"10.1109/SISPAD.2000.871255\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for optimization of the optical set-up and the sample geometries which minimize the unavoidable experimental errors are presented.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871255\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871255","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

通过自由载流子吸收测量,可以确定功率器件内部的载流子分布。在这项工作中,对整个测量过程进行了物理上严格的模拟,以研究探测光束的波传播和样品制备所产生的影响。给出了优化光学装置和样品几何形状的定量结果,使不可避免的实验误差最小化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Optimizing free carrier absorption measurements for power devices by physically rigorous simulation
The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for optimization of the optical set-up and the sample geometries which minimize the unavoidable experimental errors are presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling of direct tunneling current through gate dielectric stacks Coupled Monte Carlo simulation of Si and SiO/sub 2/ transport in MOS capacitors Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation Generic approaches to parasitic extraction problems [IC interconnects] An exhaustive method for characterizing the interconnect capacitance considering the floating dummy-fills by employing an efficient field solving algorithm
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1