高电流、小寄生电容mosfet在多晶硅层间(PSI: /spl PSI /) SOI晶圆上

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520846

M. Horiuchi, T. Teshima, K. Tokumasu, K. Yamaguchi

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引用次数: 11

摘要

提出了一种超薄SOI MOSFET，其工作电流是传统深亚微米器件的1.5倍。该器件采用传统的MOS工艺在新型多层SOI晶片上制备。

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High-current, small parasitic capacitance MOS FET on a poly-Si interlayered (PSI: /spl Psi/) SOI wafer

An ultra-thin SOI MOSFET capable of operations at a current 1.5 times that of conventional deep sub-micron devices at low voltage is presented. This device is fabricated by a conventional MOS process on novel multi-layered SOI wafers.

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1995 Symposium on VLSI Technology. Digest of Technical Papers

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