基于陷阱的非易失性存储器件中局域电荷的弛豫

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558921

M. Janai, A. Shappir, I. Bloom, B. Eitan

{"title":"基于陷阱的非易失性存储器件中局域电荷的弛豫","authors":"M. Janai, A. Shappir, I. Bloom, B. Eitan","doi":"10.1109/RELPHY.2008.4558921","DOIUrl":null,"url":null,"abstract":"Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Relaxation of localized charge in trapping-based nonvolatile memory devices\",\"authors\":\"M. Janai, A. Shappir, I. Bloom, B. Eitan\",\"doi\":\"10.1109/RELPHY.2008.4558921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

研究了NROM器件ONO层中捕获空穴和捕获电子的弛豫动力学。空穴弛豫比电子弛豫快8个数量级。循环NROM细胞中数据保留的退化被解释为无序氮化玻璃中多余孔的随机行走引起的色散传输。

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Relaxation of localized charge in trapping-based nonvolatile memory devices

Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.

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2008 IEEE International Reliability Physics Symposium

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