{"title":"SiGe/Si干热氧化的结构表征","authors":"Z.J. Chen, F. Zhang, X. Wang, S. Zou","doi":"10.1109/IWJT.2004.1306852","DOIUrl":null,"url":null,"abstract":"In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O/sub 2/50%, composition of SiGeO/sub 2/ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural characterization of SiGe/Si dry thermal oxidation\",\"authors\":\"Z.J. Chen, F. Zhang, X. Wang, S. Zou\",\"doi\":\"10.1109/IWJT.2004.1306852\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O/sub 2/50%, composition of SiGeO/sub 2/ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306852\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306852","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural characterization of SiGe/Si dry thermal oxidation
In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O/sub 2/50%, composition of SiGeO/sub 2/ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
