Y. Hsieh, Yang-Chu Hwang, Jui-Mei Fu, Yuan-Ching Peng, Lih-Juann Chen
{"title":"接触孔内位错倍增","authors":"Y. Hsieh, Yang-Chu Hwang, Jui-Mei Fu, Yuan-Ching Peng, Lih-Juann Chen","doi":"10.1109/IPFA.1997.638203","DOIUrl":null,"url":null,"abstract":"Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes (<0.5 um) with high aspect ratio (a/c>4), which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 um after back-end processings. Those dislocations were identified to be Schockley partials dislocations and stair rod dislocations lying on 4 sets of inclined (111)Si planes.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Dislocation multiplication inside contact holes\",\"authors\":\"Y. Hsieh, Yang-Chu Hwang, Jui-Mei Fu, Yuan-Ching Peng, Lih-Juann Chen\",\"doi\":\"10.1109/IPFA.1997.638203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes (<0.5 um) with high aspect ratio (a/c>4), which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 um after back-end processings. Those dislocations were identified to be Schockley partials dislocations and stair rod dislocations lying on 4 sets of inclined (111)Si planes.\",\"PeriodicalId\":159177,\"journal\":{\"name\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.1997.638203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes (<0.5 um) with high aspect ratio (a/c>4), which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 um after back-end processings. Those dislocations were identified to be Schockley partials dislocations and stair rod dislocations lying on 4 sets of inclined (111)Si planes.
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