一种高速可靠的TFT集成移位寄存器

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628173

Zhijin Hu, Congwei Liao, C. Zheng, Shengdong Zhang

{"title":"一种高速可靠的TFT集成移位寄存器","authors":"Zhijin Hu, Congwei Liao, C. Zheng, Shengdong Zhang","doi":"10.1109/EDSSC.2013.6628173","DOIUrl":null,"url":null,"abstract":"A high-speed and reliable TFT integrated shift register for high-resolution display is proposed. By inhibiting the leakage current in pull-up period and enhancing the discharge ability of driving TFT in pull-down period, the operating frequency is improved by 49%. Besides, the proposed circuit is expected to have high reliability due to the lowered gate voltages on the critical TFTs biased through capacitor coupling.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high-speed and reliable TFT integrated shift register\",\"authors\":\"Zhijin Hu, Congwei Liao, C. Zheng, Shengdong Zhang\",\"doi\":\"10.1109/EDSSC.2013.6628173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed and reliable TFT integrated shift register for high-resolution display is proposed. By inhibiting the leakage current in pull-up period and enhancing the discharge ability of driving TFT in pull-down period, the operating frequency is improved by 49%. Besides, the proposed circuit is expected to have high reliability due to the lowered gate voltages on the critical TFTs biased through capacitor coupling.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种用于高分辨率显示的高速可靠TFT集成移位寄存器。通过抑制上拉时段的漏电流，增强下拉时段驱动TFT的放电能力，使工作频率提高49%。此外，由于通过电容耦合偏置的关键tft上的栅极电压降低，所提出的电路有望具有高可靠性。

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A high-speed and reliable TFT integrated shift register

A high-speed and reliable TFT integrated shift register for high-resolution display is proposed. By inhibiting the leakage current in pull-up period and enhancing the discharge ability of driving TFT in pull-down period, the operating frequency is improved by 49%. Besides, the proposed circuit is expected to have high reliability due to the lowered gate voltages on the critical TFTs biased through capacitor coupling.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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