{"title":"薄栅氧化物中应力诱发泄漏电流的模拟","authors":"Khairurrijal, F. A. Noor, Sukirno","doi":"10.1109/SMELEC.2002.1217845","DOIUrl":null,"url":null,"abstract":"An analytic model of the stress-induced leakage current in thin gate oxides was developed under the assumptions that traps created in the gate oxide during high field injection of electrons have an exponential distribution in energy and transport of the electrons localized in the traps is due to an activated process of motion from one trap to another. The electric field and temperature dependence of the leakage current in a wide range were explained successfully by the model.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of stress-induced leakage current in thin gate oxides\",\"authors\":\"Khairurrijal, F. A. Noor, Sukirno\",\"doi\":\"10.1109/SMELEC.2002.1217845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytic model of the stress-induced leakage current in thin gate oxides was developed under the assumptions that traps created in the gate oxide during high field injection of electrons have an exponential distribution in energy and transport of the electrons localized in the traps is due to an activated process of motion from one trap to another. The electric field and temperature dependence of the leakage current in a wide range were explained successfully by the model.\",\"PeriodicalId\":211819,\"journal\":{\"name\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2002.1217845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of stress-induced leakage current in thin gate oxides
An analytic model of the stress-induced leakage current in thin gate oxides was developed under the assumptions that traps created in the gate oxide during high field injection of electrons have an exponential distribution in energy and transport of the electrons localized in the traps is due to an activated process of motion from one trap to another. The electric field and temperature dependence of the leakage current in a wide range were explained successfully by the model.
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