高均匀和低压氧化钽基RRAM的热稳定性研究

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060841

V. Zhuo, Y. Jiang, J. Robertson

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引用次数: 3

摘要

研究了taox基阻性开关器件在25 ~ 300℃温度下的阻性开关行为。设定电压和复位电压都随着温度的升高而降低。taox基RRAM在150°C下保持时间长(>10年)，并且具有良好的热稳定性。在240 ~ 300℃的高温下，低阻状态随时间变化不大。相反，高阻状态(HRS)表现为退化，然后突然失效。TaOx和Ge/TaOx器件的HRS失效时间分别在激活能为1.45 eV和1.27 eV时呈现Arrhenius依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal stability investigation in highly- uniform and low-voltage tantalum oxide-based RRAM

Resistive switching behavior of TaO_x-based resistive switching devices is investigated at temperatures of 25°C to 300°C. Both the set and reset voltages decrease with increasing temperature. Long retention (>10 years at 150°C) and good thermal stability were achieved for the TaO_x-based RRAM. At elevated temperatures from 240°C to 300°C, the low resistance state exhibits no significant change with time. In contrast, the high resistance state (HRS) shows degradation followed by sudden failure. The HRS failure times for both TaO_x and Ge/TaO_x devices exhibit Arrhenius dependence with activation energies of 1.45 eV and 1.27 eV, respectively.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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