用于150 GHz电路的超大尺寸InP hbt

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269378

J. Zolper

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引用次数: 9

摘要

描述了发射极特征尺寸小于0.25 /spl mu/m的InP异质结双极晶体管(hbt)的研制。回顾了扩展到这个维度的关键技术挑战，并列举了技术方法。这些超大尺寸InP hbt的开发有望实现时钟速度超过100 GHz的混合信号电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Super-scaled InP HBTs for 150 GHz circuits

The development of InP heterojunction bipolar transistors (HBTs) with the emitter feature size less than 0.25 /spl mu/m is described. The key technical challenges in scaling to this dimension are reviewed and the technology approaches are enumerated. The development of these super-scaled InP HBTs is expected to enable mixed signal circuits with clock speeds in excess of 100 GHz.

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IEEE International Electron Devices Meeting 2003

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