{"title":"脉冲应力条件下电迁移的阈值脉冲宽度","authors":"T. Noguchi, K. Hatanaka, K. Maeguchi","doi":"10.1109/VMIC.1989.78021","DOIUrl":null,"url":null,"abstract":"Pulsed-current-induced electromigration failure was studied under various repetition frequencies and current densities. Self-joule-heating of the conductors during stressing was monitored directly by detecting the infrared intensity emitted from the conductor. It was found that there is a critical pulse width for electromigration under pulsed stress conditions which depend on the peak current density and substrate temperature. This fact suggests that a continuous force is needed to cause Al ions to migrate. When a pulse width is sufficiently short, Al ions cannot move and settle in new unstable sites.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A threshold pulse width for electromigration under pulsed stress conditions\",\"authors\":\"T. Noguchi, K. Hatanaka, K. Maeguchi\",\"doi\":\"10.1109/VMIC.1989.78021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pulsed-current-induced electromigration failure was studied under various repetition frequencies and current densities. Self-joule-heating of the conductors during stressing was monitored directly by detecting the infrared intensity emitted from the conductor. It was found that there is a critical pulse width for electromigration under pulsed stress conditions which depend on the peak current density and substrate temperature. This fact suggests that a continuous force is needed to cause Al ions to migrate. When a pulse width is sufficiently short, Al ions cannot move and settle in new unstable sites.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A threshold pulse width for electromigration under pulsed stress conditions
Pulsed-current-induced electromigration failure was studied under various repetition frequencies and current densities. Self-joule-heating of the conductors during stressing was monitored directly by detecting the infrared intensity emitted from the conductor. It was found that there is a critical pulse width for electromigration under pulsed stress conditions which depend on the peak current density and substrate temperature. This fact suggests that a continuous force is needed to cause Al ions to migrate. When a pulse width is sufficiently short, Al ions cannot move and settle in new unstable sites.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
