625MS/s, 12位,SAR辅助流水线ADC,具有有效的级间环放大器增益分析

Yongzhen Chen, Xingchen Shen, Zhekan Ni, Jingchao Lan, Chixiao Chen, Fan Ye, Junyan Ren
{"title":"625MS/s, 12位,SAR辅助流水线ADC,具有有效的级间环放大器增益分析","authors":"Yongzhen Chen, Xingchen Shen, Zhekan Ni, Jingchao Lan, Chixiao Chen, Fan Ye, Junyan Ren","doi":"10.1109/ESSCIRC.2019.8902892","DOIUrl":null,"url":null,"abstract":"Ring amplifier has been shown as an alternative to an OTA for its low power consumption and large output swing in low-voltage, deep nanoscale CMOS processes. The robustness of the ring amplifier is an important consideration for its application in products. A transient amplification analysis in this paper reveals the difference between the DC gain and the effective gain of the ring amplifier at different output voltages. This non-linear gain error varies with process corner, supply voltage and temperature (PVT) variation. To compensate this gain error, a calibration method is proposed based on the code density analysis of the output data from the back-end stages. Designed in a 1 V 28 nm CMOS process, a prototype SAR assisted pipeline ADC is proposed with a quick-start ring amplifier. The 12-bit ADC achieves 59.3 dB SNDR and 74.4 dB SFDR with a 6 MHz input and a sample rate up to 625 MS/s. The ADC has measured SNDR and SFDR of 57.2 dB and 67.8 dB, respectively, for a Nyquist frequency input and consumes 13.2mW. The measured SNDR and SFDR remains above 53.5 dB and 66.3 dB for a -6dBFs 50 MHz input with supply voltage and temperature variation.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 625MS/s, 12-Bit, SAR Assisted Pipeline ADC with Effective Gain Analysis for Inter-stage Ringamps\",\"authors\":\"Yongzhen Chen, Xingchen Shen, Zhekan Ni, Jingchao Lan, Chixiao Chen, Fan Ye, Junyan Ren\",\"doi\":\"10.1109/ESSCIRC.2019.8902892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ring amplifier has been shown as an alternative to an OTA for its low power consumption and large output swing in low-voltage, deep nanoscale CMOS processes. The robustness of the ring amplifier is an important consideration for its application in products. A transient amplification analysis in this paper reveals the difference between the DC gain and the effective gain of the ring amplifier at different output voltages. This non-linear gain error varies with process corner, supply voltage and temperature (PVT) variation. To compensate this gain error, a calibration method is proposed based on the code density analysis of the output data from the back-end stages. Designed in a 1 V 28 nm CMOS process, a prototype SAR assisted pipeline ADC is proposed with a quick-start ring amplifier. The 12-bit ADC achieves 59.3 dB SNDR and 74.4 dB SFDR with a 6 MHz input and a sample rate up to 625 MS/s. The ADC has measured SNDR and SFDR of 57.2 dB and 67.8 dB, respectively, for a Nyquist frequency input and consumes 13.2mW. The measured SNDR and SFDR remains above 53.5 dB and 66.3 dB for a -6dBFs 50 MHz input with supply voltage and temperature variation.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

环形放大器在低电压、深纳米级CMOS工艺中具有低功耗和大输出摆幅的优点,已被证明是OTA的替代品。环形放大器的鲁棒性是其在实际应用中的重要考虑因素。本文通过瞬态放大分析,揭示了环形放大器在不同输出电压下的直流增益与有效增益之间的差异。该非线性增益误差随工艺转角、电源电压和温度(PVT)的变化而变化。为了补偿增益误差,提出了一种基于后端输出数据码密度分析的校正方法。采用1 V 28 nm CMOS工艺设计了一种带快速启动环形放大器的SAR辅助流水线ADC样机。12位ADC可实现59.3 dB SNDR和74.4 dB SFDR,输入频率为6mhz,采样率高达625 MS/s。对于奈奎斯特频率输入,ADC的SNDR和SFDR分别为57.2 dB和67.8 dB,功耗为13.2mW。在电源电压和温度变化的-6dBFs 50mhz输入下,测量到的SNDR和SFDR分别保持在53.5 dB和66.3 dB以上。
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A 625MS/s, 12-Bit, SAR Assisted Pipeline ADC with Effective Gain Analysis for Inter-stage Ringamps
Ring amplifier has been shown as an alternative to an OTA for its low power consumption and large output swing in low-voltage, deep nanoscale CMOS processes. The robustness of the ring amplifier is an important consideration for its application in products. A transient amplification analysis in this paper reveals the difference between the DC gain and the effective gain of the ring amplifier at different output voltages. This non-linear gain error varies with process corner, supply voltage and temperature (PVT) variation. To compensate this gain error, a calibration method is proposed based on the code density analysis of the output data from the back-end stages. Designed in a 1 V 28 nm CMOS process, a prototype SAR assisted pipeline ADC is proposed with a quick-start ring amplifier. The 12-bit ADC achieves 59.3 dB SNDR and 74.4 dB SFDR with a 6 MHz input and a sample rate up to 625 MS/s. The ADC has measured SNDR and SFDR of 57.2 dB and 67.8 dB, respectively, for a Nyquist frequency input and consumes 13.2mW. The measured SNDR and SFDR remains above 53.5 dB and 66.3 dB for a -6dBFs 50 MHz input with supply voltage and temperature variation.
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