应变硅技术在薄体mosfet中的有效性

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404369

N. Xu, C. Shin, F. Andrieu, B. Ho, W. Xiong, O. Weber, T. Poiroux, B. Nguyen, Munkang Choi, V. Moroz, O. Faynot, T. Liu

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引用次数: 1

摘要

研究了薄体mosfet的应变诱导迁移率增强，并分析了硅体厚度缩放对压阻系数的影响，为这些先进晶体管结构的应力工程提供了便利。对各种应力源在提高纳米栅长薄体MOSFET性能方面的有效性进行了基准测试。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effectiveness of strained-Si technology for thin-body MOSFETs

Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance.

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2012 IEEE International SOI Conference (SOI)

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