闪存NAND器件的辐射测试

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115486

D. L. Hansen, F. Meraz, J. Montoya, S. Roberg, G. Williamson

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引用次数: 2

摘要

对DDC公司生产的69F24G24闪存NAND器件中使用的4gb闪存芯片进行了总电离剂量和单事件效应测试。如果数据定期刷新，则设备在总剂量照射期间表现出良好的抗损坏位的能力。在重离子辐照的情况下，多比特扰动可能会对某些纠错方案产生问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation testing of a flash NAND device

Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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