太赫兹集成电路的现状——从元件到系统

U. Pfeiffer, R. Jain, J. Grzyb, S. Malz, P. Hillger, Pedro Rodríguez-Vázquez
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引用次数: 17

摘要

尽管有几种应用,太赫兹(THz)辐射对硬件设计提出了特别的挑战。太赫兹系统采用了几种昂贵且体积庞大的激光或III-V半导体解决方案。然而,在过去的十年中,在商用硅CMOS和SiGe HBT BiCMOS工艺技术中对太赫兹集成电路的设计进行了大量的研究。基于硅的系统主要受益于该技术的混合信号集成能力,它在太赫兹域提供了一系列新的可能性和应用。本文综述了太赫兹集成电路的研究现状。我们讨论了硅基太赫兹源和接收器的发展趋势,以及迄今为止针对不同应用领域报道的不同太赫兹片上系统。
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Current Status of Terahertz Integrated Circuits - From Components to Systems
Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.
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