不同技术下功率可逆比较器的设计

A. Grover
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引用次数: 3

摘要

本文对采用90 nm和180 nm工艺的GDI和TG可逆比较器电路进行了比较。由于这些电路在不同领域的应用,它们也被认为是量子计算的基本要求。在这里,可逆门的晶体管实现是通过使用CMOS- gdi组合电路TG电路来完成的,它提供了组合逻辑的最佳解决方案,相对于CMOS实现节省了1/3的功率,一半的面积和10%的延迟。GDI电路提供了一定程度的增强危险容忍度,更适合于低电压操作。这里的晶体管实现可逆栅极是通过使用Tanner工具和H-spice工具完成的。
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Design of Power Reversible Comparators with Different Technologies
In this article the comparison of GDI and TG based Reversible Comparator circuits using 90 nm and 180 nm Technology has been considered. Because of the applications of these circuits in different fields, these are also considered as fundamental requirement in quantum computing. Here transistor implementation of the reversible gates is done by using a combination CMOS-GDI circuit, TG Circuits, which provides the optimal solution for combinational logic, saving 1/3 the power, half the area and 10% in delay relative to a CMOS implementation. GDI circuits provide some measure of enhanced hazard tolerance and are more suitable for low voltage operation. Here transistor implementation of reversible gates is done by using Tanner tools and H-spice tools.
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