基于时间偏移校准和插值的8位2.8 GS/s Flash ADC

Xi Yang, Seung-Jun Bae, Hae-Seung Lee
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引用次数: 9

摘要

基于时间偏移校准和插值的8位2.8 GS/s闪存ADC在65nm CMOS上实现。提出的基于时间的偏移校准使用故意的定时倾斜来抵消偏移,而不会给比较器增加额外的负载,从而避免了速度损失。基于时间的4x插值将比较器的数量减少到1/4,并通过SR锁存器和延迟线提供8位精度的校准能力。在2.8 GS/s的速度下,原型从1 v电源消耗51 mW,实现了43.3 dB的奈奎斯特SNDR, 1.52 GHz的有效分辨率带宽(ERBW)和153 fJ/ convo -step的Walden品质系数(FoM),报告了比具有相同FoM的最先进单通道闪存adc更高的奈奎斯特ENOB。
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An 8-bit 2.8 GS/s Flash ADC with Time-based Offset Calibration and Interpolation in 65 nm CMOS
An 8-bit 2.8 GS/s flash ADC with time-based offset calibration and interpolation is realized in 65 nm CMOS. The proposed time-based offset calibration uses intentional timing skew for offset cancellation without adding extra load to comparators, thus avoiding the speed penalty. The time-based 4x interpolation reduces the number of comparators to 1/4 and provides calibration capability for 8-bit accuracy through SR latches and delay lines. At 2.8 GS/s, the prototype consumes 51 mW from a 1-V supply and achieves Nyquist SNDR of 43.3 dB, effective resolution bandwidth (ERBW) of 1.52 GHz, and Walden figure-of-merit (FoM) of 153 fJ/conv-step, reporting a higher Nyquist ENOB than state-of-the-art single-channel flash ADCs with comparable FoM.
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