基于TCAD的大型射频功率晶体管分段建模——指电平分析与优化

I. Khalil, H. Rueda, Damon Holmes, P. Chakraborty, D. Burdeaux
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引用次数: 0

摘要

为了评估、可视化和优化器件指级的各种性能参数,提出了一种射频功率晶体管指级和大型离散芯片的建模方法。该模型采用基于TCAD的主动模具模型和基于Wheeler传输线公式的无源互连模型相结合的方法构建。有源芯片模型总外围的一部分与互连模型连接,以构建任意尺寸的射频功率晶体管。这种模型的优点是可以灵活地在不同的模具位置探测不同的参数(例如电压,电流)。此外,可以在仿真空间中优化功率晶体管的互连,以实现性能的提高。
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TCAD based segmented modelling of large RF power-transistors-die for finger level analysis and optimization
A modeling method for RF power transistor fingers and large discrete die is presented in order to evaluate, visualize, and optimize various performance parameters at the device finger level. The model is constructed using a combination of TCAD based active die model and passive interconnect models based on Wheeler's transmission line formulation. Active die model of a fraction of the total periphery are connected with the interconnect models to build arbitrarily sized RF power transistors. The advantage of such model is shown to be flexibility of probing different parameters (e.g. voltage, current) at distinct die locations. Additionally, interconnect of the power transistor can be optimized in the simulation space in order to realize improved performance.
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