Z. Song, D. Cai, X. Li, L. Wang, Yuxiang Chen, H. P. Chen, Q. Wang, Y. Zhan, M. Ji
{"title":"基于碳掺杂Ge2Sb2Te5的40 nm节点高续航相变存储芯片的实现","authors":"Z. Song, D. Cai, X. Li, L. Wang, Yuxiang Chen, H. P. Chen, Q. Wang, Y. Zhan, M. Ji","doi":"10.1109/IEDM.2018.8614538","DOIUrl":null,"url":null,"abstract":"In this work, we present the results of a highly reliable phase change memory (PCM) based on Carbon-doped Ge2Sb2Te5- material in 40 nm node. The large Reset/Set resistance ratio of more than 2 orders of magnitude is achieved. The chip exhibits excellent data retention, endurance characteristics, and the sensing window is even larger after 260°C soldering test. It is estimated that the PCM could retain data for 10 years at 128°C. In a 128 Mb test chip over 108 cycles is achieved. PCM is suitable for applications requiring high thermal stability and cycling endurance.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"High Endurance Phase Change Memory Chip Implemented based on Carbon-doped Ge2Sb2Te5 in 40 nm Node for Embedded Application\",\"authors\":\"Z. Song, D. Cai, X. Li, L. Wang, Yuxiang Chen, H. P. Chen, Q. Wang, Y. Zhan, M. Ji\",\"doi\":\"10.1109/IEDM.2018.8614538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present the results of a highly reliable phase change memory (PCM) based on Carbon-doped Ge2Sb2Te5- material in 40 nm node. The large Reset/Set resistance ratio of more than 2 orders of magnitude is achieved. The chip exhibits excellent data retention, endurance characteristics, and the sensing window is even larger after 260°C soldering test. It is estimated that the PCM could retain data for 10 years at 128°C. In a 128 Mb test chip over 108 cycles is achieved. PCM is suitable for applications requiring high thermal stability and cycling endurance.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Endurance Phase Change Memory Chip Implemented based on Carbon-doped Ge2Sb2Te5 in 40 nm Node for Embedded Application
In this work, we present the results of a highly reliable phase change memory (PCM) based on Carbon-doped Ge2Sb2Te5- material in 40 nm node. The large Reset/Set resistance ratio of more than 2 orders of magnitude is achieved. The chip exhibits excellent data retention, endurance characteristics, and the sensing window is even larger after 260°C soldering test. It is estimated that the PCM could retain data for 10 years at 128°C. In a 128 Mb test chip over 108 cycles is achieved. PCM is suitable for applications requiring high thermal stability and cycling endurance.
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