C. McAndrew, Alexandra Lorenzo-Cassagnes, O. Hartin
{"title":"仅使用直流数据的晶体管自热校正和热导提取","authors":"C. McAndrew, Alexandra Lorenzo-Cassagnes, O. Hartin","doi":"10.1109/ICMTS.2016.7476170","DOIUrl":null,"url":null,"abstract":"This paper presents a simple technique to correct measured transistor output characteristics for the effect of self-heating. The advantage of the proposed technique is that, unlike previous methods, it does not require special test structures, but can be applied to DC data measured from standard transistor DC measurement test structures. The technique also quantifies the thermal conductance gth. The accuracy of the technique is verified by comparison with TCAD simulations, both including and excluding self-heating, and with measured data.","PeriodicalId":344487,"journal":{"name":"2016 International Conference on Microelectronic Test Structures (ICMTS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transistor self-heating correction and thermal conductance extraction using only DC data\",\"authors\":\"C. McAndrew, Alexandra Lorenzo-Cassagnes, O. Hartin\",\"doi\":\"10.1109/ICMTS.2016.7476170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a simple technique to correct measured transistor output characteristics for the effect of self-heating. The advantage of the proposed technique is that, unlike previous methods, it does not require special test structures, but can be applied to DC data measured from standard transistor DC measurement test structures. The technique also quantifies the thermal conductance gth. The accuracy of the technique is verified by comparison with TCAD simulations, both including and excluding self-heating, and with measured data.\",\"PeriodicalId\":344487,\"journal\":{\"name\":\"2016 International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2016.7476170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2016.7476170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transistor self-heating correction and thermal conductance extraction using only DC data
This paper presents a simple technique to correct measured transistor output characteristics for the effect of self-heating. The advantage of the proposed technique is that, unlike previous methods, it does not require special test structures, but can be applied to DC data measured from standard transistor DC measurement test structures. The technique also quantifies the thermal conductance gth. The accuracy of the technique is verified by comparison with TCAD simulations, both including and excluding self-heating, and with measured data.