{"title":"扫描电镜中电荷的识别与补偿","authors":"W. Wong, J. Thong, J. Phang","doi":"10.1109/IPFA.1997.638151","DOIUrl":null,"url":null,"abstract":"Common charging artifacts in the scanning electron microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Charging identification and compensation in the scanning electron microscope\",\"authors\":\"W. Wong, J. Thong, J. Phang\",\"doi\":\"10.1109/IPFA.1997.638151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Common charging artifacts in the scanning electron microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror.\",\"PeriodicalId\":159177,\"journal\":{\"name\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.1997.638151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charging identification and compensation in the scanning electron microscope
Common charging artifacts in the scanning electron microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror.