{"title":"InGaP/InGaAs/GaAs骆驼栅单/spl δ /掺杂pHEMT的性能","authors":"J. Tsai","doi":"10.1109/COMMAD.2002.1237267","DOIUrl":null,"url":null,"abstract":"A newly designed single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with n/sup +/-GaAs/p/sup +/-InGaP/n-InGaP camel gate structure has been first fabricated and demonstrated. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show an extrinsic transconductance of 85 mS/mm and a saturation current density of 425 mA/mm. Significantly, due to the p-n depletion from p/sup +/-InGaP gate to channel region and the presence of /spl Delta/Ec at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. In addition, an extremely broad gate voltage swing larger than 3 V with above 80% maximum g/sub m/ is obtained. The unit current cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are up to 18 and 30 GHz, respectively.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance of InGaP/InGaAs/GaAs camel-gate single /spl delta/-doping pHEMT\",\"authors\":\"J. Tsai\",\"doi\":\"10.1109/COMMAD.2002.1237267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A newly designed single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with n/sup +/-GaAs/p/sup +/-InGaP/n-InGaP camel gate structure has been first fabricated and demonstrated. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show an extrinsic transconductance of 85 mS/mm and a saturation current density of 425 mA/mm. Significantly, due to the p-n depletion from p/sup +/-InGaP gate to channel region and the presence of /spl Delta/Ec at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. In addition, an extremely broad gate voltage swing larger than 3 V with above 80% maximum g/sub m/ is obtained. The unit current cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are up to 18 and 30 GHz, respectively.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"208 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance of InGaP/InGaAs/GaAs camel-gate single /spl delta/-doping pHEMT
A newly designed single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with n/sup +/-GaAs/p/sup +/-InGaP/n-InGaP camel gate structure has been first fabricated and demonstrated. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show an extrinsic transconductance of 85 mS/mm and a saturation current density of 425 mA/mm. Significantly, due to the p-n depletion from p/sup +/-InGaP gate to channel region and the presence of /spl Delta/Ec at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. In addition, an extremely broad gate voltage swing larger than 3 V with above 80% maximum g/sub m/ is obtained. The unit current cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are up to 18 and 30 GHz, respectively.
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