利用优化掺杂步骤实现高效率4H-SiC IMPATT二极管

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628115

G. Dash, J. Pradhan, S. K. Swain, S. R. Pattanaik

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引用次数: 1

摘要

电场和雪崩区的宽度是决定IMPATT二极管性能的关键因素。为了优化这一特性，在雪崩区引入了一种新的掺杂模式，并探讨了其对4H-SiC IMPATT二极管太赫兹特性的影响。令人兴奋的是，通过提出的掺杂步骤，IMPAT T二极管的转换效率达到了17.24%。

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Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps

The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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