优化超薄锰合金钝化细间距damascene兼容Cu-Cu键合在低于200°C的3D集成电路

A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh
{"title":"优化超薄锰合金钝化细间距damascene兼容Cu-Cu键合在低于200°C的3D集成电路","authors":"A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh","doi":"10.23919/LTB-3D.2017.7947431","DOIUrl":null,"url":null,"abstract":"Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimized ultra-thin Manganin alloy passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC integration\",\"authors\":\"A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh\",\"doi\":\"10.23919/LTB-3D.2017.7947431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947431\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

增强Cu扩散、Cu表面钝化和界面平滑度是高质量Cu-Cu热压键合的关键要求。在我们之前的工作中,我们已经证明了使用优化的3nm锰金属合金不仅有助于在高温(<300°C)下钝化Cu表面,而且还将表面粗糙度降低到0.8 nm左右,这基本上导致了高质量的Cu-Cu键合。在本文中,我们展示了使用优化的超薄大马士革相容锰金属合金钝化的超细间距Cu-Cu热压键合。这种工程表面钝化方法可以在低于200°C的温度和4kN的标称接触力下实现高质量的粘合。此外,利用改进的开尔文结构进行了电学表征,并在多次电流应力、温度循环试验下对该键合结构进行了可靠性评估,结果表明该键合结构具有良好的稳定性,且电学性能没有下降。这一实际发现对三维集成电路的实际实现具有巨大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Optimized ultra-thin Manganin alloy passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC integration
Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si A study on low temperature SAM modified POM direct bonding affected by VUV/O3 irradiation Ar+H2 atmospheric-pressure plasma treatment for Au-Au bonding and influence of air exposure on surface contamination Sn-Bi added Ag-based transient liquid phase sintering for low temperature bonding Temperature dependence of fatigue crack propagation rate of pressureless sintered Ag nanoparticles
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1