亚四分之一微米SOI CMOS器件的先进Ge预非晶化盐化技术

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623712

Hsiao, Ping Liu, Woo

{"title":"亚四分之一微米SOI CMOS器件的先进Ge预非晶化盐化技术","authors":"Hsiao, Ping Liu, Woo","doi":"10.1109/VLSIT.1997.623712","DOIUrl":null,"url":null,"abstract":"A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"357 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices\",\"authors\":\"Hsiao, Ping Liu, Woo\",\"doi\":\"10.1109/VLSIT.1997.623712\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"357 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623712\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

提出了一种超薄SO1薄膜的新型杀盐技术。采用Ge预非晶化有利于硅化物在低温(- 400℃)下形成，有效控制硅化物深度而不形成孔洞。使用这种先进技术制造的Sub-0.25 pm SO1 CMOS器件显示出大大降低了源/漏极电阻以及良好的电气效果。

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An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices

A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.

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1997 Symposium on VLSI Technology

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