J. Lamure, B. Biasse, C. Jaussaud, A. Papon, J. Michaud, F. Gusella, C. Pudda, A. Cartier, A. Soubie, J. Margail
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引用次数: 4
摘要
LETI已经建立了一个150m /sup / 2/ class 100的洁净室，专门用于半工业基础上的氧注入分离(SIMOX)晶圆生产。该设施包括一个非常高电流的氧离子注入机(Eaton NV-200)，一个高温退火炉(温度高达1350摄氏度，6英寸容量)，和非破坏性表征工具。表征技术包括红外吸收，核反应分析和光谱反射率分析，可自动测量硅厚度至100 nm。通过SIMS(二次离子质谱法)常规检查污染水平，并使用TEM和XTEM分析监测结构和晶体质量。简述了硅薄膜SIMOX晶圆的不同制备方法:牺牲氧化法、氧化注入法和降低注入能量法。
A 150 m/sup 2/ class 100 clean room, specially dedicated for separation by implantation of oxygen (SIMOX) wafer production on a semi-industrial basis, has been set up at LETI. This facility includes a very high current oxygen ion implantation machine (Eaton NV-200), a high temperature annealing furnace (temperature up to 1350 degrees C, six inches capability), and nondestructive characterization tools. The characterization techniques include IR absorption, nuclear reaction analysis, and spectral reflectivity analysis that allows automatic measurement of silicon thickness down to 100 nm. Contamination levels are routinely checked by SIMS (secondary ion mass spectrometry) and the structure and crystalline quality are monitored using TEM and XTEM analysis. Different methods for producing thin silicon film SIMOX wafers-sacrificial oxidation, implantation through oxide, and reduction of the implantation energy-are briefly outlined.<>
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