{"title":"高性能计算和网络应用中FO-EB封装的小芯片集成解决方案","authors":"Po Yuan Su, D. Ho, Jacy Pu, Yu Po Wang","doi":"10.1109/ectc51906.2022.00337","DOIUrl":null,"url":null,"abstract":"Since its introduction in the 1960s, high performance computing (HPC) has made enormous contribution to scientific, engineering and industrial competitiveness as well as other goverment missions. High data rate with high speed transmission has been required for networking and high performance computing application, the chip size and package design has been become larger and larger. Accompanied by the big size design with package, the physical limits has the high cost for the advanced silicon node. The demand for higher functionality devices drives integration technologies to overcome limitations in Moore’s Law. Heterogeneous integration is the one of technologies to meet high performance computing application standards using high bandwidth and Input/Output (I/O) density. The split die of integration in package is the best solution to increase gross die with wafer good yield rate for cost efficiency, and Fan-out Embedded Bridge (FO-EB) Package would be the best representative for HPC and Networking application.The FO-EB is meaning spilt dies with embedded bridge die in fan out package which Inter Connect Die (ICD) become silicon bridge die to do the communications for high electrical performance purpose. Comparing with 2.5D package and FO-MCM package, FO-EB package warpage not only close with 2.5D package, but also better than FO-MCM (Fan-out Multi Chip Module) package. Besides, the electrical performance for high bandwidth memory as good as 2.5D package and FO-MCM package. The FO-EB package has integrated silicon ICD which means provide interconnections between spilt dies with short distance and the package model is more flexable than 2.5D package. That is why FO-EB would be the better choice for HPC and Networking application.The reason we choose FO-EB because it can contribute the same electrical performance to 2.5D package with FO-MCM package and the package warpgae well to be controlled. In this paper, we like to discuss a designed to evaluate the FO-EB and do the measurement comparsion for the warpage, and do the electrical preformance comparsion for the 2.5D, FO-EB and FO-MCM packages. Finally, this paper will find out the chiplets Integrated solution with FO-EB Package in HPC and Networking Application.","PeriodicalId":139520,"journal":{"name":"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Chiplets Integrated Solution with FO-EB Package in HPC and Networking Application\",\"authors\":\"Po Yuan Su, D. Ho, Jacy Pu, Yu Po Wang\",\"doi\":\"10.1109/ectc51906.2022.00337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since its introduction in the 1960s, high performance computing (HPC) has made enormous contribution to scientific, engineering and industrial competitiveness as well as other goverment missions. High data rate with high speed transmission has been required for networking and high performance computing application, the chip size and package design has been become larger and larger. Accompanied by the big size design with package, the physical limits has the high cost for the advanced silicon node. The demand for higher functionality devices drives integration technologies to overcome limitations in Moore’s Law. Heterogeneous integration is the one of technologies to meet high performance computing application standards using high bandwidth and Input/Output (I/O) density. The split die of integration in package is the best solution to increase gross die with wafer good yield rate for cost efficiency, and Fan-out Embedded Bridge (FO-EB) Package would be the best representative for HPC and Networking application.The FO-EB is meaning spilt dies with embedded bridge die in fan out package which Inter Connect Die (ICD) become silicon bridge die to do the communications for high electrical performance purpose. Comparing with 2.5D package and FO-MCM package, FO-EB package warpage not only close with 2.5D package, but also better than FO-MCM (Fan-out Multi Chip Module) package. Besides, the electrical performance for high bandwidth memory as good as 2.5D package and FO-MCM package. The FO-EB package has integrated silicon ICD which means provide interconnections between spilt dies with short distance and the package model is more flexable than 2.5D package. That is why FO-EB would be the better choice for HPC and Networking application.The reason we choose FO-EB because it can contribute the same electrical performance to 2.5D package with FO-MCM package and the package warpgae well to be controlled. In this paper, we like to discuss a designed to evaluate the FO-EB and do the measurement comparsion for the warpage, and do the electrical preformance comparsion for the 2.5D, FO-EB and FO-MCM packages. Finally, this paper will find out the chiplets Integrated solution with FO-EB Package in HPC and Networking Application.\",\"PeriodicalId\":139520,\"journal\":{\"name\":\"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ectc51906.2022.00337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ectc51906.2022.00337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
自20世纪60年代推出以来,高性能计算(HPC)为科学、工程和工业竞争力以及其他政府任务做出了巨大贡献。网络和高性能计算应用对高数据速率和高速传输的要求越来越高,芯片尺寸和封装设计也越来越大。伴随着封装的大尺寸设计,先进硅节点的物理限制具有高成本。对更高功能设备的需求推动集成技术克服摩尔定律的限制。异构集成是一种利用高带宽和I/O密度来满足高性能计算应用标准的技术。集成在封装中的分体式芯片是提高总晶片成品率和成本效率的最佳解决方案,而扇出嵌入式桥(FO-EB)封装将是高性能计算和网络应用的最佳代表。FO-EB是指在扇形封装中嵌入桥接模的溢出模,其中互连模(ICD)成为硅桥接模,用于高电气性能目的的通信。与2.5D封装和FO-MCM封装相比,FO-EB封装的翘曲度不仅接近2.5D封装,而且优于FO-MCM (Fan-out Multi Chip Module)封装。此外,高带宽存储器的电气性能可媲美2.5D封装和FO-MCM封装。FO-EB封装集成了硅ICD,这意味着在分散的模具之间提供短距离的互连,封装模型比2.5D封装更灵活。这就是为什么FO-EB将是高性能计算和网络应用程序的更好选择。我们之所以选择FO-EB,是因为它可以提供与FO-MCM封装相同的2.5D封装电气性能,并且封装翘曲易于控制。在本文中,我们将讨论一种用于评估FO-EB的设计,并对翘曲进行测量比较,并对2.5D, FO-EB和FO-MCM封装进行电气性能比较。最后,本文将探索FO-EB封装在高性能计算和网络应用中的小芯片集成解决方案。
Chiplets Integrated Solution with FO-EB Package in HPC and Networking Application
Since its introduction in the 1960s, high performance computing (HPC) has made enormous contribution to scientific, engineering and industrial competitiveness as well as other goverment missions. High data rate with high speed transmission has been required for networking and high performance computing application, the chip size and package design has been become larger and larger. Accompanied by the big size design with package, the physical limits has the high cost for the advanced silicon node. The demand for higher functionality devices drives integration technologies to overcome limitations in Moore’s Law. Heterogeneous integration is the one of technologies to meet high performance computing application standards using high bandwidth and Input/Output (I/O) density. The split die of integration in package is the best solution to increase gross die with wafer good yield rate for cost efficiency, and Fan-out Embedded Bridge (FO-EB) Package would be the best representative for HPC and Networking application.The FO-EB is meaning spilt dies with embedded bridge die in fan out package which Inter Connect Die (ICD) become silicon bridge die to do the communications for high electrical performance purpose. Comparing with 2.5D package and FO-MCM package, FO-EB package warpage not only close with 2.5D package, but also better than FO-MCM (Fan-out Multi Chip Module) package. Besides, the electrical performance for high bandwidth memory as good as 2.5D package and FO-MCM package. The FO-EB package has integrated silicon ICD which means provide interconnections between spilt dies with short distance and the package model is more flexable than 2.5D package. That is why FO-EB would be the better choice for HPC and Networking application.The reason we choose FO-EB because it can contribute the same electrical performance to 2.5D package with FO-MCM package and the package warpgae well to be controlled. In this paper, we like to discuss a designed to evaluate the FO-EB and do the measurement comparsion for the warpage, and do the electrical preformance comparsion for the 2.5D, FO-EB and FO-MCM packages. Finally, this paper will find out the chiplets Integrated solution with FO-EB Package in HPC and Networking Application.