三种工作模式下热稳定GaN HEMT射频功率器件的1.8 MeV质子测试

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115472

M. Mccurdy, peixiong zhao, D. Fleetwood, K. Bole, B. Poling

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引用次数: 0

摘要

我们报告了来自Cree和Qorvo公司的市售GaN HEMT射频功率器件的总结测试结果，该器件在三种工作模式下具有1.8 MeV的质子。测试参数包括阈值电压、跨导和代表RF/功率性能的s参数。热电冷却被用来最小化热引起的参数位移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1.8 MeV proton testing of thermally stabilized GaN HEMT RF power devices in three operational modes

We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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