微波和RTA退火的phop掺杂，应变Si(100)和(110)注入分子碳离子

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI:10.1109/IWJT.2013.6644511

M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro

{"title":"微波和RTA退火的phop掺杂，应变Si(100)和(110)注入分子碳离子","authors":"M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro","doi":"10.1109/IWJT.2013.6644511","DOIUrl":null,"url":null,"abstract":"Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions\",\"authors\":\"M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro\",\"doi\":\"10.1109/IWJT.2013.6644511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.\",\"PeriodicalId\":196705,\"journal\":{\"name\":\"2013 13th International Workshop on Junction Technology (IWJT)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 13th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2013.6644511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2013.6644511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

比较了在≈500℃下微波(MWA)和600 ~ 1000℃下快速退火对掺杂磷的应变Si(100)和注入分子碳(C7H7)离子的Si(110)的影响。p掺杂、C7植入的MWA应变nMOS S/D型结的取代碳含量达到1.44%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 13th International Workshop on Junction Technology (IWJT)

自引率

0.00%

发文量