Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin
{"title":"生长后热退火对mbe生长InAlGaAs/GaAs量子点的影响","authors":"Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin","doi":"10.1109/CSW55288.2022.9930380","DOIUrl":null,"url":null,"abstract":"Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Post-growth Thermal Annealing on MBE-grown InAlGaAs/GaAs Quantum Dots\",\"authors\":\"Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin\",\"doi\":\"10.1109/CSW55288.2022.9930380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of Post-growth Thermal Annealing on MBE-grown InAlGaAs/GaAs Quantum Dots
Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.
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