7.5 ns 350 mW BiCMOS pal型器件

R. Leung, K. Le, C. Sung, Y. Chu, G. Conner, R. Lane, J. de Jong
{"title":"7.5 ns 350 mW BiCMOS pal型器件","authors":"R. Leung, K. Le, C. Sung, Y. Chu, G. Conner, R. Lane, J. de Jong","doi":"10.1109/CICC.1989.56695","DOIUrl":null,"url":null,"abstract":"A BiCMOS PAL-type device is described. It has a propagation delay of 7.5 ns and consumes 350 mW of power. The circuit has eight inputs, four bidirectional input/outputs and four registered outputs (known as 16R4 in databooks). The technology is a twin-well, merged bipolar and CMOS (BiCMOS) process. The minimum feature size is 1.2 μm","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 7.5 ns 350 mW BiCMOS PAL-type device\",\"authors\":\"R. Leung, K. Le, C. Sung, Y. Chu, G. Conner, R. Lane, J. de Jong\",\"doi\":\"10.1109/CICC.1989.56695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A BiCMOS PAL-type device is described. It has a propagation delay of 7.5 ns and consumes 350 mW of power. The circuit has eight inputs, four bidirectional input/outputs and four registered outputs (known as 16R4 in databooks). The technology is a twin-well, merged bipolar and CMOS (BiCMOS) process. The minimum feature size is 1.2 μm\",\"PeriodicalId\":165054,\"journal\":{\"name\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1989.56695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种BiCMOS pal型器件。它的传播延迟为7.5 ns,功耗为350 mW。电路有8个输入,4个双向输入/输出和4个注册输出(在数据手册中称为16R4)。该技术是双井,双极和CMOS (BiCMOS)合并工艺。最小特征尺寸为1.2 μm
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 7.5 ns 350 mW BiCMOS PAL-type device
A BiCMOS PAL-type device is described. It has a propagation delay of 7.5 ns and consumes 350 mW of power. The circuit has eight inputs, four bidirectional input/outputs and four registered outputs (known as 16R4 in databooks). The technology is a twin-well, merged bipolar and CMOS (BiCMOS) process. The minimum feature size is 1.2 μm
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 1.4 ns/64 kb RAM with 85 ps/3680 logic gate array A gate matrix deformation and three-dimensional maze routing for dense MOS module generation A submicron CMOS triple level metal technology for ASIC applications Hot carrier effects on CMOS circuit performance The QML-an approach for qualifying ASICs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1