90nm Cu/SiOC (k=2.9)器件中Cu与介电扩散势垒界面的重构缓解了电迁移

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269338

Y. Wee, Soo-Geun Lee, Won-sang Song, Kyoung-Woo Lee, N. Lee, J.E. Ku, Ki-kwan Park, Seung Jin Lee, Jae Hak Kim, J. Chung, Hong-jae Shin, S. Hah, Ho-Kyu Kang, G. Suh

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摘要

尽管使用HSQ过孔填充方案集成90 nm Cu/SiOC (k=2.9)器件取得了初步成功，但可靠性问题仍然存在。通过将电迁移(EM)与介质扩散屏障的阻湿能力相关联，我们找到了导致阻湿的因素，即SiC中的N和h含量。因此，增加SiCN薄膜中的N/H比，我们证明了EM可靠性的显着提高。

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Alleviating electromigration through re-engineering the interface between Cu & dielectric-diffusion-barrier in 90 nm Cu/SiOC (k=2.9) device

Despite the initial success in integrating a 90 nm Cu/SiOC (k=2.9) device using the HSQ via-filler scheme, the reliability issues remain. By correlating electromigration (EM) with the moisture blocking capability of the dielectric-diffusion-barrier, we target the factors contributing to the moisture blockage, namely, the N and H-content within SiC. Consequently, increasing the N/H ratio in the SiCN film, we demonstrated a significant enhancement in EM reliability.

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IEEE International Electron Devices Meeting 2003

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