快速热退火后B+注入硅的综合表征

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-01 DOI:10.23919/IWJT.2019.8802616

W. Yoo, Jung Gon Kim, T. Ishigaki, K. Kang

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引用次数: 0

摘要

形成具有低漏电和低缺陷的高完整性结是用先进的节点器件制造高性能器件的必要条件。在退火过程中，对种植体激活和种植体损伤恢复机制的了解是有限的。非接触式植入激活和残余损伤监测技术的发展将是有益的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comprehensive Characterization of B+ Implanted Silicon after Rapid Thermal Annealing

Formation of high integrity junctions with low junction leakage and defects is essential for fabricating high performance devices with advanced node devices. Understanding of implant activation and implant damage recovery mechanisms during annealing process steps is limited. Development of noncontact implant activation and residual damage monitoring techniques would be beneficial.

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2019 19th International Workshop on Junction Technology (IWJT)

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