{"title":"低温连接技术对硅模具应力状态的影响","authors":"T. Herboth, M. Guenther, R. Zeiser, J. Wilde","doi":"10.1109/EUROSIME.2013.6529945","DOIUrl":null,"url":null,"abstract":"The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Investigation of stress states in silicon dies induced by the Low Temperature Joining Technology\",\"authors\":\"T. Herboth, M. Guenther, R. Zeiser, J. Wilde\",\"doi\":\"10.1109/EUROSIME.2013.6529945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.\",\"PeriodicalId\":270532,\"journal\":{\"name\":\"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2013.6529945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2013.6529945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of stress states in silicon dies induced by the Low Temperature Joining Technology
The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.
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