{"title":"一种用于可编程逻辑的新型非易失性存储单元","authors":"H. Lin, S. Tiwari","doi":"10.1109/SOI.2005.1563590","DOIUrl":null,"url":null,"abstract":"A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel nonvolatile memory cell for programmable logic\",\"authors\":\"H. Lin, S. Tiwari\",\"doi\":\"10.1109/SOI.2005.1563590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel nonvolatile memory cell for programmable logic
A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.
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