M. Fakhruddin, Mao-Chyuan Tang, J. Kuo, J. Karp, D. Chen, C. Yeh, S. Chien
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Hot Carrier Degradation and Performance of 65nm RF n-MOSFET
Hot carrier stress (HCS) induces significant degradation on the performance of 65 nm RF n-MOSFET with minimum poly length (Lpoly). Although the cutoff frequency (Ft) is very high (~212 GHz) for these devices, the high HCS degradation poses a challenge for RF application. Additional effort will be needed to improve the process and/or device to take full advantage of the record n-MOSFET performance.
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