控制热扩散和瞬态的GaN芯片防泄漏封装

Yasuo Saito, T. Aizawa, K. Wasa, Yoshiro Nogami
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引用次数: 2

摘要

首先提出了塑料模具包装方案,通过优化散热片上的微纹理,实现散热片与塑料模具的防漏接合。总泄漏测试后未检测到泄漏。垂直排列的石墨衬底(VGS)提供了第二种解决方案来控制从GaN到衬底的热扩散和瞬态。在铺层厚度为1 mm的情况下,在Y轴和z轴上叠加石墨烯平面的铜层VGS与cu基复合衬底(CCS)相比,通道温度和热阻(Rth)分别降低了40 K和0.28 K/W。因为VGS的热扩散率比CCS快十倍。结果表明,cu层压vgs封装的GaN hemt与ccs封装的GaN hemt在开/关期间的温差减小了18 K。Cu-laminated VGS-packaged GaN HEMT的时间常数为2.5 ms,远长于0.2 ms。
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Leak-Proof Packaging for GaN Chip with Controlled Thermal Spreading and Transients
Plastic mold packaging is proposed as the first solution to make leak proof joinability between the heat spreader and plastic mold by optimization of micro-textures on the spreader. No leaks were detected after gross-leak testing. Vertically-aligned graphitic substrate (VGS) provided the second solution to control thermal spreading and transients from GaN to the spreader. A Copper-laminated VGS with stacking graphene planes in Y and Z-axes significantly reduced the channel temperature and Thermal resistance (Rth) by 40 K and 0.28 K/W than those in Cu-based composite substrate (CCS) even for the same spreader thickness of 1 mm. Since thermal diffusivity for VGS is ten times faster than CCS., temperature difference during ON/OFF intervals was reduced by 18 K between Cu-laminated VGS-packaged and CCS-packaged GaN HEMTs. The time constant of Cu-laminated VGS-packaged GaN HEMT was 2.5 ms, much longer than 0.2 ms.
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