{"title":"基于RGA的发射极多晶硅工艺优化及臭氧水界面氧化物生长工艺方案","authors":"C. Willis, P. Foglietti, J. Artinger","doi":"10.1109/ISSM.2001.962973","DOIUrl":null,"url":null,"abstract":"A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water\",\"authors\":\"C. Willis, P. Foglietti, J. Artinger\",\"doi\":\"10.1109/ISSM.2001.962973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water
A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.
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