PVD氮化铝在射频集成电路中的散热特性

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430951

L. La Spina, L. Nanver, H. Schellevis, E. Iborra, M. Clement, J. Olivares

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引用次数: 7

摘要

物理气相沉积氮化铝用于射频集成电路的热扩散，其特点是制造和测量几种不同类型的测试结构。结果表明，该材料是一种良好的介电绝缘体，具有较低的机械应力和压电响应。由于层厚达6微米，玻璃上硅双极工艺中的电热不稳定性大大降低。

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Characterization of PVD aluminum nitride for heat spreading in RF IC's

Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 mum, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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