高压垂直GaN - PN二极管的研制

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9372079

R. Kaplar, B. Gunning, A. Allerman, M. Crawford, J. Flicker, A. Armstrong, L. Yates, A. Binder, J. Dickerson, G. Pickrell, P. Sharps, T. Anderson, J. Gallagher, A. Jacobs, A. Koehler, M. Tadjer, K. Hobart, M. Ebrish, M. Porter, R. Martinez, K. Zeng, D. Ji, S. Chowdhury, O. Aktas, J. Cooper

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引用次数: 4

摘要

本文介绍了用于高压应用的垂直GaN - PN二极管的发展情况。这项工作的核心是建立一个集成外延生长、晶圆测量、器件设计、加工和表征、可靠性评估和故障分析的铸造厂。一个平行的努力旨在开发非常高电压(高达20千伏)的GaN - PN二极管，用于保护电网免受电磁脉冲的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of High-Voltage Vertical GaN PN Diodes

This paper describes the development of vertical GaN PN diodes for high-voltage applications. A centerpiece of this work is the creation of a foundry effort that incorporates epitaxial growth, wafer metrology, device design, processing, and characterization, and reliability evaluation and failure analysis. A parallel effort aims to develop very high voltage (up to 20 kV) GaN PN diodes for use as devices to protect the electric grid against electromagnetic pulses.

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2020 IEEE International Electron Devices Meeting (IEDM)

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