{"title":"异质结双极晶体管InP/InGaAs光电混频器的模型表征","authors":"N. A. Shaharuddin, S. M. Idrus, S. Isaak","doi":"10.1109/ICP.2012.6379881","DOIUrl":null,"url":null,"abstract":"Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"216 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer\",\"authors\":\"N. A. Shaharuddin, S. M. Idrus, S. Isaak\",\"doi\":\"10.1109/ICP.2012.6379881\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.\",\"PeriodicalId\":243533,\"journal\":{\"name\":\"2012 IEEE 3rd International Conference on Photonics\",\"volume\":\"216 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 3rd International Conference on Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICP.2012.6379881\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 3rd International Conference on Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICP.2012.6379881","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer
Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an up-conversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.
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