10-b 750µW 200MS/s全动态单通道SAR ADC, 40nm CMOS

Xiyuan Tang, Long Chen, Jeonggoo Song, Nan Sun
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引用次数: 16

摘要

本文提出了一种10位高速两级SAR ADC。每个位使用一个专用的比较器来存储其输出,并为下一次比较生成一个异步时钟。通过这样做,SAR逻辑延迟和功耗显着降低。采用一种改进的双向单侧开关技术,通过控制输入共模电压Vcm来优化比较器的速度和偏置。为了抑制比较器偏置失配引起的非线性,在第二精细级采用了冗余和共享前置放大器。前置放大器采用动态锁存器实现,以避免静态功耗。40纳米CMOS原型ADC在200MS/s采样速率下无需任何校准即可实现55dB峰值SNDR。1.1V电源消耗750μW, Walden FOM为8.6fJ/转换阶跃。
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A 10-b 750µW 200MS/s fully dynamic single-channel SAR ADC in 40nm CMOS
This paper presents a 10-bit high-speed two-stage SAR ADC. Each bit uses a dedicated comparator to store its output and generate an asynchronous clock for the next comparison. By doing this, the SAR logic delay and power are significantly reduced. A modified bidirectional single-side switching technique is used to optimize the comparator speed and offset by controlling the input common mode voltage Vcm. To suppress the comparator offset mismatch induced nonlinearity, redundancy and a shared pre-amplifier are employed in the second fine stage. The pre-amplifier is implemented using a dynamic latch to avoid static power consumption. The prototype ADC in 40-nm CMOS achieves 55dB peak SNDR at 200MS/s sampling rate without any calibration. It consumes 750μW from 1.1V power supply, leading to a Walden FOM of 8.6fJ/conversion-step.
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