L. Gitelman, Z. Gutman, S. Bar-Lev, S. Stolyarova, Y. Nemirovsky
{"title":"CMOS-SOI-MEMS晶体管(TMOS)用于红外成像","authors":"L. Gitelman, Z. Gutman, S. Bar-Lev, S. Stolyarova, Y. Nemirovsky","doi":"10.1109/OMEMS.2008.4607884","DOIUrl":null,"url":null,"abstract":"The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CMOS-SOI-MEMS transistor (TMOS) for infrared imaging\",\"authors\":\"L. Gitelman, Z. Gutman, S. Bar-Lev, S. Stolyarova, Y. Nemirovsky\",\"doi\":\"10.1109/OMEMS.2008.4607884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.\",\"PeriodicalId\":402931,\"journal\":{\"name\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2008.4607884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS-SOI-MEMS transistor (TMOS) for infrared imaging
The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
