一种新型的硅基三维纳米结构蚀刻氧化制备方法及其在SOI对称波导和三维锥形光斑尺寸变换器中的应用

2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics Pub Date : 2008-08-26 DOI:10.1109/OMEMS.2008.4607811

Linghan Li, A. Higo, M. Kubota, M. Sugiyama, Y. Nakano

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引用次数: 3

摘要

提出了一种利用干式蚀刻的空间效应对三维硅结构进行蚀刻氧化的新方法。利用该方法制备了超厚SiO2包层SOI对称波导和集成三维锥度光斑尺寸转换器的硅波导结构的测试装置。

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A novel etching-oxidation fabrication method for 3D nano structures on silicon and its application to SOI symmetric waveguide and 3D taper spot size converter

A novel etching and oxidation method utilizing space effect of dry etching for three dimensional silicon structure is presented. Testing devices of SOI symmetric waveguide with ultra thick SiO2 cladding and silicon waveguide structure integrated with 3D taper spot size converter are fabricated using this method.

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2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics

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